Buffer HF improved with surfactant

Improved HF Buffer System with stabilized HF activity - selective solvent for SiO2 used in semiconductor technology of planar passivated devices - transistors, integrated circuits, diodes, rectifiers, SCR, MOS, FETAdvantages:. Ready-to-use - Economical. HF activity buffer stabilized. Excellent process reproducibility. Does not undercut masked oxide. Will not stain diffused silicon surfaces. Avoids contamination on silicon surfaces. Photoresist coating unaffectedBuffer HF improved is an idealized buffer preparation characterized by a high buffer index and an optimized, uniform oxide-etch rate. The composition of buffer HF improved is precisely controlled by HF activity measurements and electrometric pH. The mass balance corresponds essentially to (HF) + (F) + 2(HF2) for a two-ligand mononuclear complex and the charge balance is (H+) - (F) + (HF2- ). The HF activity is maintained constant through the specific equilibrium constant which regulates the equilibrium reaction between fluoride, bifluoride, and HF buffer components. A second equilibrium constant participates in the regulation of the hydronium in concentration of pH.Buffer HF improved is produced and analyzed to be essentially free of impurities. Nitrate ions, a common impurity causing stains on diffused silicon surfaces, are specifically removed. Heavy metal impurities, which can lead to degradation of device characteristics, are rigidly controlled under manufacturing process specifications.